MANUFACTURING METHOD OF CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

The instant disclosure relates to a semiconductor device which includes a semiconductor substrate, at least one patterned reinforcing layer, a plurality of lower electrodes, and a supporting layer. The at least one patterned reinforcing layer is arranged above the semiconductor substrate, wherein the at least one patterned reinforcing layer has a plurality of reinforcing structures configured to define a plurality of alignment apertures. The lower electrodes are arranged on the semiconductor substrate, wherein N of the lower electrodes pass through each of the alignment apertures, where N is an integer greater than or equal to 1. The supporting layer is arranged above the at least one patterned reinforcing layer and between the lower electrodes.

主权项

1. A manufacturing method of capacitor structure:
providing a semiconductor substrate; forming a laminate structure on the semiconductor substrate, wherein the laminate structure includes at least one sacrificial layer and at least one patterned reinforcing layer in a stacked arrangement with respect to the at least one sacrificial layer, and wherein the at least one patterned reinforcing layer has a plurality of reinforcing structures configured to define a plurality of alignment apertures; forming a supporting layer on the laminate structure; forming a plurality of deep trenches which pass through the supporting layer and the laminate structure through the alignment apertures; forming a lower electrode to cover the inner-walls of each of the deep trenches, wherein some of the reinforcing structures scatter around the lower electrode to support its outer-side-walls; selectively removing the supporting layer, the laminate structure, and the lower electrodes to form a plurality of openings above the alignment apertures; and removing the at least one sacrificial layer of the laminate structure through the openings and the alignment apertures.