Interconnect Structure And Method of Forming

摘要

An interconnect structure of an integrated circuit and a method for forming the same are provided. The interconnect structure includes a conductive line, and optionally, a cap layer over the conductive line. A treatment is performed to remove impurities prior to forming a layer, e.g., an etch stop layer, ILD, or the like, over the conductive line and/or the cap layer.

主权项

1. A method for forming an interconnect structure, the method comprising:
providing a workpiece, the workpiece having a first dielectric layer and a conductive feature formed in the first dielectric layer; treating the workpiece to remove impurities; and after the treating, forming a second dielectric layer over the conductive feature.