<p>A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels.</p>
申请公布号
WO2014159804(A8)
申请公布日期
2015.07.23
申请号
WO2014US25199
申请日期
2014.03.13
申请人
UES, INC.;BHATTACHARYA, RABI, S.;EVAN, HOWARD, BLANE, JR.