发明名称 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH
摘要 <p>A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels.</p>
申请公布号 WO2014159804(A8) 申请公布日期 2015.07.23
申请号 WO2014US25199 申请日期 2014.03.13
申请人 UES, INC.;BHATTACHARYA, RABI, S.;EVAN, HOWARD, BLANE, JR. 发明人 BHATTACHARYA, RABI, S.;EVAN, HOWARD, BLANE, JR.
分类号 H01L31/09;H01L31/0304 主分类号 H01L31/09
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