发明名称 PROCESSING METHOD OF WAFER
摘要 <p>PROBLEM TO BE SOLVED: To provide a processing method of a wafer capable of preventing debris, adhering to the sidewall of a laser processing groove, from falling off.SOLUTION: A processing method of a wafer has a grooving step for forming a laser processing groove (15) by irradiating a wafer (11) with a laser beam (L) along dividing lines (13), and a cleaning step for fusing debris (17) adhered to one sidewall in the grooving step, by irradiating the laser beam along the laser processing groove while locating a focused spot (L1) between the center of the laser processing groove and one sidewall. The laser beam has an intensity distribution approximate to the Gaussian distribution, the power of the laser beam irradiating the one sidewall in the cleaning step is larger than that of the laser beam irradiating the one sidewall in the grooving step, and is a proper power for the fusion of the debris.</p>
申请公布号 JP2015133437(A) 申请公布日期 2015.07.23
申请号 JP20140004880 申请日期 2014.01.15
申请人 DISCO ABRASIVE SYST LTD 发明人 TANAKA KEI
分类号 H01L21/301 主分类号 H01L21/301
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