发明名称 Test Structure and Method of Testing Electrical Characteristics of Through Vias
摘要 A method and apparatus for testing the electrical characteristics, such as electrical continuity, is provided. A substrate, such as a wafer or an interposer, having a plurality of through vias (TVs) is provided. Along one side of the substrate, a conductive layer electrically couples two or more of the TVs. Thereafter, the electrical characteristics of the TVs may be test by, for example, a probe card in electrical contact with the TVs on the other side of the substrate. During testing, current passes through a first TV from a first side of the substrate, to the conductive layer on a second side of the substrate, to a second TV, and back to the first side of the substrate through the second TV.
申请公布号 US2015208504(A1) 申请公布日期 2015.07.23
申请号 US201514673400 申请日期 2015.03.30
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Hou Shang-Yun;Wu Wei-Cheng;Hu Hsien-Pin;Ko Jung Cheng;Jeng Shin-Puu;Yu Chen-Hua;Chen Kim Hong
分类号 H05K1/11;H05K1/02 主分类号 H05K1/11
代理机构 代理人
主权项 1. An apparatus comprising: a substrate having a first side and a second side; a first plurality of electrical connections on the first side of the substrate; a second plurality of electrical connections on the second side of the substrate; and a plurality of through vias (TVs), each of the plurality of TVs electrically coupling respective ones of the first plurality of electrical connections and the second plurality of electrical connections; and a conductive layer over the second plurality of electrical connections, the conductive layer electrically coupling directly between two or more of the second plurality of electrical connections to electrically couple respective ones of the plurality of TVs.
地址 Hsin-Chu TW