SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device including a first region which, in an oxide semiconductor layer, has a higher carrier concentration than a channel region immediately below a gate electrode formed over the oxide semiconductor layer and is formed at least in a partial region other than the channel region, and a second region which, in the oxide semiconductor layer, has a higher carrier concentration than the first region and is formed farther from the channel region than the first region. The first region is formed through a first reduction reaction by stacking a first reduction reaction film over the oxide semiconductor layer and reducing the oxide semiconductor layer by the first reduction reaction film. The second region is formed through a second reduction reaction by stacking a second reduction reaction film over the oxide semiconductor layer and reducing the oxide semiconductor layer by the second reduction reaction film.

主权项

1. A semiconductor device comprising:
a first region which is, in an oxide semiconductor layer, a region having a higher carrier concentration than a channel region immediately below a gate electrode formed over the oxide semiconductor layer and is formed at least in a partial region other than the channel region; and a second region which is, in the oxide semiconductor layer, a region having a higher carrier concentration than the first region and is formed farther from the channel region than the first region, wherein the first region is formed through a first reduction reaction by stacking a first reduction reaction film over the oxide semiconductor layer and reducing the oxide semiconductor layer by the first reduction reaction film, and wherein the second region is formed through a second reduction reaction by stacking a second reduction reaction film over the oxide semiconductor layer and reducing the oxide semiconductor layer by the second reduction reaction film.