THIN FILM TRANSISTOR AND DISPLAY DEVICE

摘要

Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

主权项

1. A thin film transistor comprising;
a gate electrode, an oxide semiconductor layer comprising two or more layers, an etch stopper layer, a source-drain electrode, and a gate insulator film,the oxide semiconductor layer is configured to be used as a channel layer,the etch stopper layer is configured to protect a surface of the oxide semiconductor layer,the gate insulator film is interposed between the gate electrode and the channel layer,the oxide semiconductor layer in direct contact to the gate insulator film is comprising In, Zn, and Sn, anda concentration of hydrogen in the gate insulator film in direct contact to the oxide semiconductor layer is regulated to 4 atomic % or lower.