| 发明名称 |
FIN-Type Semiconductor Device and Manufacturing Method |
| 摘要 |
One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part of the fin, a drain extension region of a first conductivity type, a source region and a drain region of the first conductivity type, a source contact in contact with the source region, the source contact extending along a vertical direction along the source region, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region |
| 申请公布号 |
US2015206975(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201514641896 |
申请日期 |
2015.03.09 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Meiser Andreas;Kampen Christian |
| 分类号 |
H01L29/78;H01L29/66;H01L21/225;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a fin at a first side of a semiconductor body; a body region of a second conductivity type in at least a part of the fin; a drain extension region of a first conductivity type; a source region and a drain region of the first conductivity type; a source contact in contact with the source region, the source contact extending along a vertical direction along the source region; and a gate structure adjoining opposing walls of the fin, wherein the body region and the drain extension region are arranged one after another between the source region and the drain region. |
| 地址 |
Villach AT |
