SEMICONDUCTOR DEVICE WITH COMBINED POWER AND GROUND RING STRUCTURE

摘要

A semiconductor device includes a lead frame, and an integrated circuit die. The lead frame has a flag for supporting the die and leads that surround that flag and die. The lead frame also has ground ring that surrounds the flag and die. First bond wires electrically connect the die to the lead frame leads. An insulating layer is disposed on the ground ring, and a power layer is disposed on the insulating layer. The semiconductor device further includes second bond wires that connect the die to the ground ring and third bond wires that connect the die to the power layer.

主权项

1. A semiconductor device, comprising:
a lead frame having an interior region, a plurality of leads that surround the interior region, and a first ground ring that surrounds the interior region; an integrated circuit die having a plurality of die bonding pads on an active surface thereof, wherein the die is located at the interior region of the lead frame; first bond wires that electrically connect first ones of the die bonding pads with first ones of the lead frame leads; an insulating layer disposed on the first ground ring; a power layer disposed on the insulating layer; second bond wires between second ones of the die bonding pads and the power layer; third bond wires between third ones of the die bonding pads and the ground ring; and fourth bond wires between the power layer and second ones of the lead frame leads.