发明名称 LAYER STRUCTURE FOR MOUNTING SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
摘要 A fabrication method of a layer structure for mounting a semiconductor device is provided, which includes the steps of: providing a base material, wherein the base material has a conductive layer having a first surface having a plurality of first conductive elements and an opposite second surface having a plurality of second conductive elements, and a first encapsulant formed on the first surface of the conductive layer for encapsulating the first conductive elements; partially removing the conductive layer to form a circuit layer that electrically connects the first conductive elements and the second conductive elements; and forming a second encapsulant on a bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, thus reducing the fabrication difficulty and increasing the product yield.
申请公布号 US2015206814(A1) 申请公布日期 2015.07.23
申请号 US201414290217 申请日期 2014.05.29
申请人 SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 Tsai Fang-Lin;Chang Yi-Feng;Liu Cheng-Jen;Fu Yi-Min;Chen Hung-Chi
分类号 H01L23/14;H01L21/48 主分类号 H01L23/14
代理机构 代理人
主权项 1. A layer structure for mounting a semiconductor device, comprising: a first encapsulant having a first bottom surface and a first top surface opposite to the first bottom surface; a plurality of first conductive elements embedded in the first encapsulant and each having a first end portion exposed from the first bottom surface of the first encapsulant; a circuit layer formed on the first end portions of the first conductive elements and having a first surface adjacent to the first conductive elements and a second surface opposite to the first surface; a plurality of second conductive elements formed on the second surface of the circuit layer so as to be electrically connected to the first conductive elements through the circuit layer; and a second encapsulant formed on the first bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, wherein the second encapsulant has a second top surface adjacent to the first encapsulant and a second bottom surface opposite to the second top surface.
地址 Taichung TW