发明名称 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING DEVICE AND COMPUTER READABLE
摘要 PROBLEM TO BE SOLVED: To provide a substrate cleaning method which can inhibit generation of development defect to a further degree.SOLUTION: A substrate cleaning method comprises: a first step of discharging a cleaning liquid from a nozzle N2 to a central part of a surface Wa of a wafer W during rotation of the wafer W; a second step of discharging a drying gas from a nozzle N3 to the central part of the surface Wa of the wafer W to form a dried region in the central part of the surface Wa of the wafer W; a third step of discharging the cleaning liquid from the nozzle N2 to the surface Wa of the wafer W while moving the nozzle N2 from the center side toward a peripheral side of the wafer W during rotation of the wafer W; a fourth step of acquiring a width of an intermediate region between a wet region which spreads from a supply position of the cleaning liquid to the outside on the surface Wa of the wafer W and the dried region; and a fifth step of changing processing parameters provided for processing of the wafer W when the width of the intermediate region exceeds a threshold value.
申请公布号 JP2015133347(A) 申请公布日期 2015.07.23
申请号 JP20140002413 申请日期 2014.01.09
申请人 TOKYO ELECTRON LTD 发明人 KAMIMURA RYOICHI;TAKIGUCHI YASUSHI
分类号 H01L21/304;H01L21/027 主分类号 H01L21/304
代理机构 代理人
主权项
地址