| 发明名称 |
AREA-EFFICIENT DEGENERATIVE INDUCTANCE FOR A LOW NOISE AMPLIFIER (LNA) |
| 摘要 |
A device includes a first and a second low noise amplifier (LNA), a first degenerative inductance coupled between the first LNA and ground by a first ground connection, and a second degenerative inductance coupled between the second LNA and ground by a second ground connection, the first and second degenerative inductances configured to establish negative inductive coupling between the first and second degenerative inductances. |
| 申请公布号 |
US2015207482(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414157553 |
申请日期 |
2014.01.17 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Abdel Ghany Ehab Ahmed Sobhy;Woo Sang Hyun;Leung Wingching Vincent;Jin Zhang;Chang Li-Chung |
| 分类号 |
H03G3/30;H03F3/19 |
主分类号 |
H03G3/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device, comprising:
a first and a second low noise amplifier (LNA); a first degenerative inductance coupled between the first LNA and ground; and a second degenerative inductance coupled between the second LNA and ground, the first and second degenerative inductances configured to establish negative inductive coupling. |
| 地址 |
San Diego CA US |
