Method for S/TEM Sample Analysis

摘要

An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. Preferred embodiments of the present invention also provide an in-line process for S/TEM based metrology on objects such as integrated circuits or other structures fabricated on semiconductor wafer by providing methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.

主权项

1. A method for TEM analysis of multiple samples from two or more sites on a substrate, comprising:
selecting a set of process parameter values for the samples, said process parameter values including positional data for each sample site to be analyzed; loading the substrate into a charged particle beam system, said charged particle beam system to process the substrate according to the selected process parameter values; automatically navigating to the two or more sample sites using said positional data; imaging the sample sites; automatically milling the substrate surface on either side of the desired sample locations leaving a thin vertical layer of material comprising a sample to be analyzed; extracting the samples from the substrate and placing each sample at a designated location on a sample holder; transferring the samples to a TEM system, said TEM importing the process parameter values for each sample and the TEM also processing the samples according to the selected process parameter values; imaging the samples with the TEM; and analyzing the TEM image to obtain information about the samples.