| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which uses an oxide semiconductor and has a high ON-state current; and provide a semiconductor device which uses an oxide semiconductor and has a low OFF-state current; and provide a semiconductor device which uses an oxide semiconductor and has stable electric characteristics; and provide a semiconductor device which uses an oxide semiconductor and has high reliability.SOLUTION: A semiconductor device has a transistor which has an oxide semiconductor film, a first gate electrode which overlaps the oxide semiconductor film, a gate insulation film between the oxide semiconductor film and the first gate electrode, a first insulation film on the oxide semiconductor film, a pair of electrodes electrically connected to the oxide semiconductor film on the first insulation film, a second insulation film on the first insulation film and the pair of electrodes, and a second gate electrode which overlaps the oxide semiconductor film on the second insulation film, in which the first insulation film has a region of a thickness of not less than 1 nm and not more than 50 nm, and a length between the pair of electrodes is not less than 1 μm and not more and 6 μm or less. |
