Semiconductor Device, Semiconductor Module, and Electronic Circuit

摘要

According to one embodiment, in semiconductor device, first semiconductor region is provided between first electrode and second electrode. Second semiconductor region is provided between first semiconductor region and second electrode. Third semiconductor region is provided between second semiconductor region and second electrode. Third electrode is in contact with first semiconductor region, second semiconductor region, and third semiconductor region via insulating film. Element part is configured to detect heat released from at least one of first semiconductor region, second semiconductor region, and third semiconductor region. Fourth semiconductor region is provided between first semiconductor region and second electrode. Fifth semiconductor region is provided between fourth semiconductor region and second electrode. And fourth electrode is in contact with first semiconductor region, fourth semiconductor region, and fifth semiconductor region via insulating film.

主权项

1. A semiconductor device comprising:
a first electrode; a second electrode; a first semiconductor region of a first conductivity type provided between the first electrode and the second electrode, and the first semiconductor region including a first region and a second region; a second semiconductor region of a second conductivity type provided between the first semiconductor region and the second electrode in the first region; a third semiconductor region of the first conductivity type provided between the second semiconductor region and the second electrode, and the third semiconductor region having a higher impurity concentration than the first semiconductor region; a third electrode being in contact with the first semiconductor region, the second semiconductor region, and the third semiconductor region via a first insulating film; an element part configured to detect heat released from at least one of the first semiconductor region, the second semiconductor region, and the third semiconductor region; a fourth semiconductor region of the second conductivity type provided between the first semiconductor region and the second electrode in the second region; a fifth semiconductor region of the first conductivity type provided between the fourth semiconductor region and the second electrode, and the fifth semiconductor region having a higher impurity concentration than the first semiconductor region; and a fourth electrode being in contact with the first semiconductor region, the fourth semiconductor region, and the fifth semiconductor region via a second insulating film.