| 发明名称 |
RRAM CELL INCLUDING V-SHAPED STRUCTURE |
| 摘要 |
Embodiments of a resistive random access memory (RRAM) cell structure are provided. The RRAM cell structure includes a first electrode over a substrate. The RRAM cell structure also includes a resistance variable layer over the first electrode. The resistance variable layer has a first portion in a V-shape. The RRAM cell structure further includes a second electrode over the resistance variable layer. |
| 申请公布号 |
US2015207065(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414162024 |
申请日期 |
2014.01.23 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
LIN Hsing-Chih |
| 分类号 |
H01L45/00;H01L51/05 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An RRAM cell structure, comprising:
a first electrode over a substrate; a resistance variable layer over the first electrode, wherein the resistance variable layer has a first portion in a V-shape; and a second electrode over the resistance variable layer. |
| 地址 |
Hsin-Chu TW |
