SEMICONDUCTOR DEVICE

摘要

The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

主权项

1. A semiconductor device comprising:
a magnetization free layer having a first surface and a second surface that face each other; a reference layer electrically coupled to the first surface of the magnetization free layer; and a first magnetization fixed layer and a second magnetization fixed layer electrically coupled to the second surface of the magnetization free layer and separated from each other along the second surface, wherein a conductive first non-magnetic layer positioned between the magnetization free layer and the first magnetization fixed layer is provided, wherein a conductive second non-magnetic layer positioned between the magnetization free layer and the second magnetization fixed layer is provided, and wherein the first non-magnetic layer and the second non-magnetic layer are separated from each other.