Nanopyramid Sized Opto-Electronic Structure and Method for Manufacturing of Same

摘要

Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.

主权项

1. A semiconductor light emitting device comprising a support and a plurality of nanopyramids arrayed on the support, each of the plurality of the nanopyramids comprising:
a first conductivity type semiconductor core or core seed; a first conductivity type semiconductor shell enclosing the core or the core seed of the first conductivity type semiconductor; and a first layer of a second conductivity type semiconductor over the shell of the first conductivity type semiconductor, wherein the first conductivity type semiconductor shell and the first layer of second conductivity type semiconductor are configured to form a pn or pin junction that in operation provides an active region for light generation.