Body-Tied, Strained-Channel Multi-Gate Device and Methods of Manufacturing Same

摘要

A fin-FET or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor fin extending from the semiconductor substrate. The fin has a second lattice constant, different from the first lattice constant, and a top surface and two opposed side surfaces. The transistor also includes a gate dielectric covering at least a portion of the top surface and the two opposed side surfaces, and a gate electrode covering at least a portion of the gate dielectric. The resulting channel has a strain induced therein by the lattice mismatch between the fin and the substrate. This strain can be tuned by selection of the respective materials.

主权项

1. A device comprising:
a semiconductor substrate having a first lattice constant; a semiconductor fin extending directly and continuously from a top surface of the semiconductor substrate, the having a second lattice constant, the second lattice constant being different from the first lattice constant, the fin having a bottom surface disposed directly on the top surface of the semiconductor substrate, an opposite top surface and two opposed side surfaces, wherein the difference in lattice constants creates a bi-axial compressive strain in the semiconductor fin at an interface between the top surface of the semiconductor substrate and the bottom surface of the fin; a gate dielectric covering at least a portion of the top surface and the two opposed side surfaces; and a gate electrode covering at least a portion of the gate dielectric.