METHODS OF OPERATING A MEMORY DEVICE HAVING A BURIED BOOSTING PLATE

摘要

Memory devices are disclosed, such as those that include a semiconductor-on-insulator (SOI) NAND memory array having a boosting plate. The boosting plate may be disposed in an insulator layer of the SOI substrate such that the boosting plate exerts a capacitive coupling effect on a p-well of the memory array. Such a boosting plate may be used to boost the p-well during program and erase operations of the memory array. During a read operation, the boosting plate may be grounded to minimize interaction with p-well. Systems including the memory array and methods of operating the memory array are also disclosed.

主权项

1. A method of operating a memory device, the memory device comprising at least one memory cell being on a semiconductor material, the semiconductor material being over a dielectric material, the method comprising:
biasing a boosting plate under the dielectric material to a non-ground voltage level as one step of operating the memory cell.