PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE

摘要

A process for producing single-crystal silicon carbide is provided with which it is possible to easily separate the single-crystal silicon carbide from the pedestal. The process comprises a step (S10) in which a seed substrate is affixed to a pedestal through a stress-relieving layer, a step (S20) in which single-crystal silicon carbide is grown on the seed substrate, a step (S30) in which the single-crystal silicon carbide is separated from the pedestal at the stress-relieving layer, and a step (S40) in which the residue of the stress-relieving layer which is adherent to the single-crystal silicon carbide after the separation step (S30) is removed.