发明名称 NEGATIVE RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a negative resist material, particularly, a chemically amplified negative resist material having high resolution, giving a good pattern profile after exposure, and exhibiting high durability as a permanent film.SOLUTION: The negative resist material comprises, as a base resin, a novolac resin having a repeating unit (a) represented by general formula (1) below. In general formula (1), Rrepresents one of a hydrogen atom, hydroxy group, linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, alkoxy group, acyl group, acyloxy group, and alkoxycarbonyl group; Rrepresents one of a hydrogen atom, linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, alkenyl group having 2 to 10 carbon atoms, and aryl group having 6 to 10 carbon atoms, which may include a hydroxy group, alkoxy group, ether group, thioether group, carboxyl group, alkoxycarbonyl group, or acyloxy group; and a satisfies 0<a&le;1.
申请公布号 JP2015132676(A) 申请公布日期 2015.07.23
申请号 JP20140003194 申请日期 2014.01.10
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;URANO HIROYUKI;IIO TADASHI
分类号 G03F7/038;C08G8/18;H01L21/027 主分类号 G03F7/038
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