| 发明名称 |
IMAGE-SENSOR DEVICE STRUCTURE AND METHOD OF MANUFACTURING |
| 摘要 |
Embodiments of an image-sensor device structure and a method of manufacturing thereof are provided. The image-sensor device structure includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The image-sensor device structure also includes an interconnect structure over the semiconductor substrate, and the interconnect structure includes a transparent dielectric layer over the light-sensing region. The transparent dielectric layer has an optical transmittance ranging from about 90% to about 97%. |
| 申请公布号 |
US2015206917(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414158230 |
申请日期 |
2014.01.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
CHIU Cheng-Ming;CHEN Chun-Yan;NI Chyi-Tsong;JANG Ruei-Hung |
| 分类号 |
H01L27/146;H01L21/768 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image-sensor device structure, comprising:
a semiconductor substrate; a light-sensing region in the semiconductor substrate; and an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a transparent dielectric layer over the light-sensing region, and the transparent dielectric layer has an optical transmittance ranging from about 90% to about 97%. |
| 地址 |
Hsin-Chu TW |
