Methods of Forming Memory Arrays and Semiconductor Constructions

摘要

Some embodiments include methods of forming semiconductor constructions. A heavily-doped region is formed within a first semiconductor material, and a second semiconductor material is epitaxially grown over the first semiconductor material. The second semiconductor material is patterned to form circuit components, and the heavily-doped region is patterned to form spaced-apart buried lines electrically coupling pluralities of the circuit components to one another. At least some of the patterning of the heavily-doped region occurs simultaneously with at least some of the patterning of the second semiconductor material.

主权项

1. A method of forming a memory array, comprising:
providing a base comprising a first semiconductive material, the base having an memory array region and a peripheral region, an upper surface of the array region being recessed relative to uppermost surfaces of the base in the peripheral region; forming a heavily-doped region within the first semiconductor material in the array region; epitaxially growing a second semiconductor material over the first semiconductor material; the second semiconductor material being in situ doped during the epitaxial growth to form a stack of doped regions over the heavily-doped region; forming first trenches through the second semiconductor material; the first trenches extending along a first direction, and penetrating entirely through the heavily-doped region; forming second trenches through the second semiconductor material, the second trenches extending along a second direction which intersects the first direction, and not penetrating entirely through the heavily-doped region; the first and second trenches together patterning the second semiconductor material into a plurality of vertically-extending pillars comprising the stacked doped regions, and patterning the heavily-doped region into a plurality of buried lines under the pillars; the buried lines electrically interconnecting pluralities of the pillars to one another; and forming data storage devices over the vertically-extending pillars and electrically coupled with top doped regions of the stacked doped regions.