| 发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure further includes a dielectric layer on the semiconductor substrate. The semiconductor device structure also includes at least one conductive structure embedded in the dielectric layer. A plurality of crystal grains are composed of the conductive structure, and a ratio of an average grain size of the crystal grains to a width of the conductive structure ranges from about 0.75 to about 40. |
| 申请公布号 |
US2015206840(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414161959 |
申请日期 |
2014.01.23 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
LIN Chi-Feng;CHI Chih-Chien;HSIEH Ching-Hua |
| 分类号 |
H01L23/538;H01L21/768 |
主分类号 |
H01L23/538 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a semiconductor substrate; a dielectric layer on the semiconductor substrate; and at least one conductive structure embedded in the dielectric layer, wherein a plurality of crystal grains are composed of the conductive structure, and a ratio of an average grain size of the crystal grains to a width of the conductive structure ranges from about 0.75 to about 40. |
| 地址 |
Hsin-Chu TW |
