发明名称 |
Immunity of Phase Change Material to Disturb in the Amorphous Phase |
摘要 |
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. |
申请公布号 |
US2015206581(A1) |
申请公布日期 |
2015.07.23 |
申请号 |
US201514672332 |
申请日期 |
2015.03.30 |
申请人 |
Ovonyx, Inc. |
发明人 |
Gordon George A.;Savransky Semyon D.;Parkinson Ward D.;Kostylev Sergey;Reed James;Lowrey Tyler A.;Karpov Ilya V.;Spadini Gianpaolo |
分类号 |
G11C13/00;G11C11/56 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
reducing temporal drift of a field programming gate array of ovonic threshold switches. |
地址 |
Sterling Heights MI US |