Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit

摘要

An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device.

主权项

1. A method for producing a device, the method comprising:
providing a substrate with integrated circuit elements disposed at a surface of the substrate; forming a housing over the substrate; and forming a metal device within the housing, the housing including a wall with an aperture through which a through-metallization passes in order to make electrical contact to the device within the housing.