SILICON WAFER AND METHOD FOR PRODUCING SAME

摘要

This method for producing a silicon wafer has: a first heat processing step for RTP of a silicon wafer in an oxidizing ambient; a step for eliminating a region of the silicon wafer at which the oxygen concentration has increased by means of the first heat processing step; a second heat processing step for RTP of the silicon wafer in a nitriding ambient or an Ar ambient after performing the elimination step; and a step for eliminating a region of the silicon wafer having a reduced oxygen combination as a result of the second heat processing step after performing the second heat processing step. As a result of this method, it is possible to produce a silicon wafer having a gettering site and a reduction or elimination of latent defects such as OSF nuclei or oxygen precipitation nuclei present in a Pv region.