发明名称 |
IMPROVED STORAGE IN CHARGE-TRAP MEMORY STRUCTURES USING ADDITIONAL ELECTRICALLY-CHARGED REGIONS |
摘要 |
A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates. |
申请公布号 |
WO2015108742(A1) |
申请公布日期 |
2015.07.23 |
申请号 |
WO2015US10551 |
申请日期 |
2015.01.08 |
申请人 |
APPLE INC. |
发明人 |
RIZEL, ARIK;MEIR, AVRAHAM, POZA;SHUR, YAEL;GURGI, EYAL;BAUM, BARAK |
分类号 |
G11C11/56;G11C16/04;H01L27/115;H01L29/423 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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