| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a crucible for sapphire single crystal growth, optimized in order to obtain a sapphire single crystal.SOLUTION: A crucible 100 for sapphire single crystal growth has a first layer 1 including Mo as a principal component and having a crucible shape and a second layer 2 provided in the inner periphery of the first layer 1 and including W as a principal component. The first layer 1 and the second layer 2 have a laminated structure. The first layer has a structure in which at least one kind of elements of Ti, Y, Zr, Hf, V, Nb, Ta, La, Ce and Nd is dissolved in Mo; at least one kind of carbide particles, oxide particles, nitride particles and boride particles of the element is dispersed in the Mo; or some of the elements are dissolved in the Mo and the remainder consisting of the carbide particles, the oxide particles, nitride particles and boride particles is dispersed in the Mo. A total content of Ti, Y, Zr, Hf, V, Nb, Ta, La, Ce and Nd is 0.1 mass% or more and 5.0 mass% or less, and the second layer is constituted of W and inevitable impurities.</p> |
