SEMICONDUCTOR DEVICE AND FABRICATION METHOD

摘要

Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

主权项

1. A semiconductor fabrication method, comprising:
providing a semiconductor substrate comprising a first electrode layer therein, wherein the first electrode layer has a top surface coplanar with a top surface of the semiconductor substrate; forming a sacrificial layer on the semiconductor substrate and the first electrode layer; forming a first mask layer on the sacrificial layer, wherein the first mask layer is made of a conductive material; etching the first mask layer and the sacrificial layer until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer; performing a cleaning process to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings; and forming conductive plugs in the openings after the cleaning process.