| 摘要 |
<p>The present invention relates to a transistor controlling one or more work function by using one or more selected from bending deformation and position movement of graphene. Provided is a transistor controlling one or more work function which is one or more selected among adjustment of one or more height of schottky barrier and adjustment of one or more fermi level by including selection of one or more among bending deformation and position movement, and which is selected among bending deformation and position movement, which is one or more selected from one or more piezo material, graphene having piezo properties, magnetic particles, or particles having charge by electrostatic level of a barrier control circuit crossed by forming one or more piezo material, graphene having piezo properties, magnetic particles, or particles having charge selected among one p on a lower end of a graphene.</p> |
