| 摘要 |
<p>The present invention relates to a transistor controlling one or more work functions by using one or more selected from bending deformation and position movement of graphene. Provided is a transistor controlling one or more work functions which is one or more selected among adjustment of one or more heights of Schottky barrier and adjustment of one or more Fermi levels by including selection of one or more among bending deformation and position movement, and which is selected among bending deformation and position movement, which is one or more selected from one or more piezo materials, graphene having piezo properties, magnetic particles, or particles having charge by electrostatic level of a barrier control circuit crossed by forming one or more piezo materials, graphene having piezo properties, magnetic particles, or particles having charge on a lower end of a graphene.</p> |
