| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for forming a resist pattern, by which a fine contact hole pattern can be formed by double exposure using a negative type chemically amplified resist composition.SOLUTION: A resist film 12 is formed by using a negative type chemically amplified resist composition on a support 11; the resist film 12 is subjected to a first exposure through a photomask by dipole illumination to form a latent image 12'; then the resist film 12 is subjected to a second exposure through a photomask by dipole illumination to form a latent image 12" that intersects the latent image 12'; and the resist film 12 is developed to form a hole pattern. The negative type chemically amplified resist composition is prepared by dissolving a base component (A) soluble with an alkali developing solution, an acid generator component (B) that generates an acid by exposure and a crosslinking agent component (C) in an organic solvent (S), in which the base component (A) comprises an alkali-soluble resin having a fluorinated hydroxyalkyl group. |
