| 摘要 |
<p>The method for fabricating a QFN semiconductor package of the present invention includes: a step of pressurizing a first bonding tape in the lower part of a lead frame where a paddle region and a lead region are defined, and attaching the first bonding tape; a step of hardening the first bonding tape attached to the lower part of the lead frame; a step of mounting a semiconductor chip on the paddle region, and wire-bonding a lead electrode pattern formed in the lead region to the semiconductor chip; a step of removing the first bonding tap hardened on the lower part of the lead frame; a step of attaching a second bonding tap to the lower part of the lead frame; a step of molding the lead frame on the result; and a step of removing the second bonding tape attached to the lower part of the molded result. According to the present invention, a half etching part is fixed by attaching the bonding tape with FOW characteristics to the lower part of the lead frame in a process of manufacturing the QFN semiconductor package, so a wire bonding process is stably carried out. Thereby, a wire error due to bouncing can be reduced.</p> |
