| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method of activating an impurity by laser irradiation, which can inhibit formation of irregularity on a rear face of a semiconductor substrate. <P>SOLUTION: A semiconductor device manufacturing method comprises: preparing a semiconductor substrate 3a and performing an ion implantation process of ion implanting impurities for composing activation layers 12, 13 from a rear face of the semiconductor substrate 3a; subsequently, performing an activation process of scanning while irradiating from the rear face of the semiconductor substrate 3a simultaneously, a first laser beam 18a and a second laser beam 18b having energy lower than that of the first laser beam 18a and wavelength longer than that of the first laser beam 18a, with an irradiation spot overlapping a part of an irradiation spot of the first laser beam 18a, and activating the impurities by the first laser beam 18a to form the activation layers 12, 13. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
