THE BENDING DEFORMATION OF GRAPHENE, POSITION MOVEMENT, THAT AT LEAST ONE OF THE ONE OR MORE SELECTED FROM ONE OR MORE OF CONTROLLING THE WORK FUNCTION OF THE TRANSISTOR

摘要

The present invention relates to a transistor controlling one or more work function by using at least one selected from bending deformation of graphene and position movement. Provided is a transistor controlling one or more work function by at least one selected among bending deformation of graphene and position movement by at least one selected among one or more piezo material graphene having piezo characteristics, magnetic particles, or particles with charge by an electrostatic level of a crossing barrier adjustment circuit by preparing at least one selected among one or more piezo material graphene having piezo characteristics, magnetic particles, or particles with charge on the bottom part by one or more selected among adjustment of one or more height of one or more Schottky barrier and adjustment of one or more Fermi level by preparing one or more selected among the bending deformation of graphene and position movement.