| 摘要 |
<p>[Problem] To provide a spin electronic memory and a spin electronic circuit, both of which enable electric power saving in an electronic device. [Solution] A spin electronic memory according to the present invention is characterized by being equipped with at least a pair of electrodes and a spin flow generation layer which is arranged between the electrodes, comprises an alloy layer (A) having a thickness of 0 to 2 nm exclusive and mainly composed of Sb2Te3 or Bi2Te3 and an alloy layer (B) laminated adjacent to the alloy layer (A) and mainly composed of GeTe, and can generate a density difference between two spin electrons that have different spin states from each other in the alloy layer (A) on the basis of a voltage applied from the electrodes, wherein a memory operation is carried out utilizing one of the spin electrons which has a higher density.</p> |
