| 摘要 |
The invention provides a novel absorber represented by the following chemical formula 1 and a composition for preparing an organic antireflective protecting layer comprising the same, wherein the absorber has excellent absorbency of reflective light generated in a lithography process for forming a fine pattern, in particular for forming an ultra fine pattern by the use of 248nmKrF excimer laser, and has a fine pattern for forming an organic anti-reflective film and forming a semiconductor element using thereof, the chemical formula 1 being shown in the description. In the above formula, various substituents are the same as defined in the description. |
