发明名称 Circuit and method for biasing a plate-shaped sensor element of semiconductor material
摘要 <p>Circuit and method for biasing a plate-shaped sensor element (2) made of doped semiconductor material and having a first resp. second excitation contact (C, A) connected to a first resp. second excitation node (Cn, An), and a first resp. second sense contact (B, D) connected to a first resp. second sense node (Bn, Dn). The plate-shaped sensor element is electrically isolated from a substrate or well (5) by means of a first PN-junction. The method comprises: a) applying to the first excitation node (Cn) a predefined first current (I ex ) generated by a first current source (11);b) applying to the second excitation node (An) a second current (I' ex ) generated by a controllable second source (12);c) controlling the second source (12) by means of a negative feedback loop based on a comparison between a value representative for a common mode voltage (V cm ) of the voltages (VB, VD) of the sense nodes (Bn, Dn) and a predefined reference voltage (V ref ), such that the common mode voltage (V cm ) is substantially equal to the reference voltage (V ref ).</p>
申请公布号 EP2722682(B1) 申请公布日期 2015.07.22
申请号 EP20130189012 申请日期 2013.10.16
申请人 MELEXIS TECHNOLOGIES NV 发明人 RAMAN, JOHAN;ROMBOUTS, PIETER
分类号 G01R33/00;G01R33/07 主分类号 G01R33/00
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