| 摘要 |
<p>Provided in an embodiment is a light emitting device which comprises a support member; a light emitting structure including a first semiconductor layer arranged on the support member, and including an electrode area, an active layer arranged on the first semiconductor layer except form the electrode area, and a second semiconductor layer arranged on the active layer; and a second electrode including a first electrode arranged on the electrode area, and a second electrode arranged on the second semiconductor layer, and second electrode including a pad electrode and an extended electrode extended from the pad electrode, wherein the extended electrode comprises a first extended electrode having first width, and a second extended electrode separated from the first extended electrode part in a first gap 1.5 to 3 time larger than the first width to be adjacent, and having second width.</p> |
