发明名称 |
スピントルク移動磁気抵抗ランダムアクセスメモリ(STT‐MRAM)のソースローディング効果の低減 |
摘要 |
Systems and methods to reduce source loading effects in STT-MRAM are disclosed. In a particular embodiment, a method includes determining a switching current ratio of a magnetic tunnel junction (MTJ) structure that enables stable operation of a memory cell. The memory cell includes the MTJ structure serially coupled to an access transistor. The method also includes modifying an offset magnetic field that is incident to a free layer of the MTJ structure. The modified offset magnetic field causes the MTJ structure to exhibit the switching current ratio. |
申请公布号 |
JP5752750(B2) |
申请公布日期 |
2015.07.22 |
申请号 |
JP20130140492 |
申请日期 |
2013.07.04 |
申请人 |
クアルコム,インコーポレイテッド |
发明人 |
カンホ・イ;スン・エイチ・カン;シャオチュン・ジュウ |
分类号 |
H01L21/8246;G11C11/15;H01L27/105;H01L29/82;H01L43/08 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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