| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device with small feedback capacity and low switching loss. <P>SOLUTION: The semiconductor device comprises: a semiconductor substrate 20; a drift layer 21 formed on a surface of the semiconductor substrate 20; first well regions 41 selectively formed on the drift layer 21; source regions 80 that are selectively formed in regions on surfaces of first well regions 41, and define the surfaces of first well regions 41 sandwiched between the regions and the drift layer 21 as channel regions; a gate electrode 50 formed over from the channel regions to the drift layer 21 via a gate insulating film 30; second well regions 43 of a second conductive type formed in non-contact with the first well regions 41 in at least a part of the regions except the first well regions 41, in a plan view of cell placement regions in the drift layer 21; source electrodes in contact with the first and second well regions 41 and 43; and a drain electrode 77 formed on the backside of the semiconductor substrate 20. <P>COPYRIGHT: (C)2012,JPO&INPIT |
