发明名称 |
不純物のゲッタリングプロセスで絶縁層付きの半導体基板を製造する方法 |
摘要 |
A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded. |
申请公布号 |
JP5752264(B2) |
申请公布日期 |
2015.07.22 |
申请号 |
JP20130546558 |
申请日期 |
2010.12.31 |
申请人 |
シャンハイ シングイ テクノロジー カンパニー リミテッドSHANGHAI SIMGUI TECHNOLOGY CO., LTD;シャンハイ インスティトゥート オブ マイクロシステム アンド インフォーメイション テクノロジー, チャイニーズ アカデミー オブ サイエンシズSHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
发明人 |
ウェイ,シン;ワン,ゾンダン;イエ,フェイ;カオ,ゴンバイ;リン,チェング;ザン,ミャオ;ワン,シー |
分类号 |
H01L21/322;H01L21/02;H01L21/304;H01L27/12 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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