MULTI-BIT MAGNETIC MEMORY CELL

摘要

A device (20) for storing data includes at least first and second ferromagnetic films (F1, F2) and a sensing circuit (28). The ferromagnetic films both have perpendicular magnetic anisotropy that is configured responsively to the stored data, and are connected so that an electrical current traverses the first and second ferromagnetic films and generates respective first and second extraordinary Hall voltages therein. The sensing circuit is configured to read out the stored data by measuring the first and second extraordinary Hall voltages.