| 摘要 |
A collector layer (101 e) having p type is formed on a silicon carbide substrate (90) having n type. A drift layer (102) having n type is formed on a top surface side of the collector layer (101e). A body region (103) provided on the drift layer (102) and having p type, and an emitter region (104) provided on the body region (103) to be separated from the drift layer (102) by the body region (103) and having n type are formed. A bottom surface side (101B) of the collector layer (101e) is exposed by removing the silicon carbide substrate (90). |
