| 摘要 |
PROBLEM TO BE SOLVED: To provide a first photoresist film having improved effect as a photosensitive antireflection film superior in size controllability and a pattern forming method using a second photoresist film combined on the first photoresist film.SOLUTION: There is provided a method for forming a pattern comprising the steps of: applying a first positive resist material using a polymer compound which contains a repeating unit having an aromatic group and a repeating unit having an acid generating group of a sulfonium salt and is made soluble in an alkali developer by the action of an acid as a base compound to form a first resist film; applying a second positive resist material containing a solvent having an ester group having 6 to 8 carbon atoms which does not dissolve the first resist film and a polymer compound which is made soluble in an alkali developer by the action of an acid to form a second resist film; and exposing and developing the first and second resist films simultaneously to form a resist pattern. By combining the first resist film with the second resist film, resistance can be enhanced when etching a substrate with a developed resist pattern as a mask or when implanting ions, compared to the case of using only the second resist film. |
