发明名称 半導体回路
摘要 <p>According to an embodiment, a semiconductor integrated circuit includes a first power supply terminal, a second power supply terminal, a regulator circuit, an electrostatic discharge (ESD) protection circuit, and a level shift circuit. A first voltage is applied to the first power supply terminal. A second voltage different from the first voltage is applied to the second power supply terminal. The regulator circuit adjusts the second voltage, and outputs the second voltage adjusted as an output voltage to an output terminal. The ESD protection circuit discharges ESD generated at the output terminal. The level shift circuit level-shifts the magnitude of the first voltage to the magnitude of the second voltage, and outputs a first control signal to electrically separate the regulator circuit from the ESD protection circuit depending on whether or not the first and second voltages are applied.</p>
申请公布号 JP5752659(B2) 申请公布日期 2015.07.22
申请号 JP20120207564 申请日期 2012.09.20
申请人 发明人
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
代理机构 代理人
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