| 摘要 |
During a read process for a memory device, such as a phase change memory device, a bias condition can be applied to a memory cell to determine the memory cell's state. The determined state of the memory cell can depend on a threshold voltage of the memory cell. The threshold voltage of the memory cell may shift over time. The shift in threshold voltage may result in read errors. The applied bias condition may be modified based on the resulting read errors. |
