Transistor formation using cold welding

摘要

A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.

主权项

1. A method for fabrication of a semiconductor device, comprising:
providing a first substrate assembly including a first substrate of a semiconductor material, a sacrificial layer present on a surface of the first substrate, a channel layer formed on the first sacrificial layer, and a first metal layer formed on the first sacrificial layer; providing a second substrate assembly including a second substrate of a semiconductor material and a second metal layer formed on the second substrate; joining the first metal layer to the second metal layer using a cold welding process; and removing an entirety of sacrificial layer by an etch process, wherein by removing the entirety of the sacrificial layer, the first substrate is separated from an assembly of the first metal layer and the second metal layer that has been joined and the second substrate that was not in contact with the sacrificial layer.